Samsung Starting To Make 80nm DDR2 Memory At Speed
amsung Electronics announced today that it is the first maker to begin mass producing DDR2 512Mbit DRAM chips on an 80nm process. With 80nm process technology, Samsung claims to be able to increase its production efficiency by 50% over the previous 90nm process and it is hoping that this will enable it to better meet increasing demand for DDR2. This is great news and I can’t wait to see how these new IC’s overclock!
Samsung says that it able to smoothly transition from 90nm to 80nm process technology because it utilized many of the basic features of 90nm geometries. As a result, there have been minimal upgrades to its fabrication lines. The move to 80nm circuitry was accelerated by the use of a recess channel array transistor (RCAT). This three-dimensional transistor layout enhances the refresh rate, which is a critical element in data storage. Samsung’s RCAT also reduces cell area coverage, which allows for increased process scaling by freeing up space for growth in the number of chips per wafer.
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