Samsung Now Producing 20nm-class 64-gigabit 3-bit NAND Flash Memory
Samsung today the industrys first production of a 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer (nm)-class process technology. The highly advanced new chip can be used in high-density flash solutions such as USB flash drives (UFDs) and Secure Digital (SD) memory cards. Samsung announced they were producing 20nm-class 32Gb MLC NAND in April, so this expands their product offerings as this is a 20nm-class 64Gb 3-bit NAND Flash part. It has been rumored that since Samsung has leapfrogged IMFT with 20nm flash memory that it could trigger lower prices by IMFT and create a price war between the companies and help lower the cost of devices like SSDs, USB Flash Drives and Smartphones. Samsung’s 20nm class, 64Gb 3-bit NAND has a 60 percent higher productivity level than the 30nm class, 32Gb 3-bit NAND. Improved performance also comes by applying Toggle DDR 1.0 specifications, compared to SDR based 30nm class NAND chips.
Samsung has repeatedly provided the market with leading-edge NAND flash solutions, including the introduction of 30nm-class, 32Gb 3-bit NAND flash last November, said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics. By now entering into full production of 20nm-class 64Gb 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND.
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