Samsung Begins Operation of Worlds Largest Memory Fab, Line-16

Samsung announced today that it has begun operations of its new Line-16 memory semiconductor fabrication facility, which will provide the industry’s largest production capacity. It also announced the start of mass production of the industry’s first double data rate-3 (DDR3) dynamic random access memory (DRAM) based on 20 nanometer (nm) class process technology, which offers significant improvements to productivity and reduces energy consumption. The announcements were made during a ceremony at Samsung’s Nano City Complex in Hwaseong, Gyeonggi Province, where the new Line-16 is located. Samsung also announced the world’s first mass production of 20nm-class 2 gigabit (Gb) DDR3 DRAM. The 20nm-class DDR3 DRAM promises the most advanced performance yet, a further improvement on the 30nm-class* DDR3 DRAM that Samsung introduced in July last year. The 20nm-class solution improves productivity by 50 percent and reduces energy consumption by up to 40 percent, therein providing the greenest DDR3 solution available.