New Type of Non-Volatile RAM 10-100x Faster Than Current Memory
Researchers in Taiwan and the University of California have shown prototype memory cells operating between 10 and 100 times as fast as conventional RAM. They have done this by creating nano-sized 3nm silicon dots that change their state when a short pulse of green laser light is shone on them. The researchers have written a paper on it, catchily entitled Fast Programming Metal-Gate Si Quantum Dot Nonvolatile Memory Using Green Nanosecond Laser Spike Annealing published in the American Institute of Physics (AIP) journal Applied Physics Letters.Jia-Min Shieh, the co-author of the paper and a researcher at the National Nano Device Laboratories in Hsinchu, Taiwan, said: “The metal-gate structure is a mainstream technology on the path toward nanoscale complementary metal-oxide-semiconductor (CMOS) memory technology. Our system uses numerous, discrete silicon nanodots for charge storage and removal. These charges can enter (data write) and leave (data erase) the numerous discrete nanodots in a quick and simple way.
Finally, it shouldn’t be too hard to manufacture these devices with current technology, helping to bring them to market sooner:
“The materials and the processes used for the devices are also compatible with current mainstream integrated circuit technologies. This technology not only meets the current CMOS process line, but can also be applied to other advanced-structure devices.”
The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1s under low operating voltages of7V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM.
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