Intel & Micron Announces Mass Production of 64Gb 20nm NAND
Today, Micron and Intel extend their leadership in NAND technology by introducing the worlds first 128Gb NAND device and announcing mass production of the companies new 20nm, single chip storage solution. Developed through Intel and Microns joint-development venture, IM Flash Technologies (IMFT), the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die. It also provides twice the storage capacity and performance of the companies’ existing 20nm 64Gb NAND device. The 128Gb device meets the high-speed ONFI 3.0 specification to achieve speeds of 333 megatransfers per second (MT/s), providing customers with a more cost-effective solid-state storage solution for todays slim, sleek product designs, including tablets, smartphones and high-capacity solid-state drives (SSDs.)
It is gratifying to see the continued NAND leadership from the Intel-Micron joint development with yet more firsts as our manufacturing teams deliver these high-density, low-cost, compute-quality 20nm NAND devices, said Rob Crooke, Intel vice president and general manager of Intels Non-Volatile Memory Solutions Group. Through the utilization of planar cell structure and Hi-K/Metal gate stack, IMFT continues to advance the technological capabilities of our NAND flash memory solutions to enable exciting new products, services and form factors.
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