Intel, Samsung and Toshiba Aim For 10nm Chips By 2016

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Chipmakers Intel Corp, Toshiba Corp and Samsung Electronics Co Ltd will join hands to develop technologies that could more than halve semiconductor line widths to nearly 10 nanometers by 2016, the Nikkei daily reported.

Intel 10nm Fab

Japan’s Ministry of Economy, Trade and Industry will likely provide around 5 billion yen ($61.21 million) of the roughly 10 billion yen in initial funds for the R&D efforts, with the rest expected to come from the members of the consortium, the paper said. Toshiba and Samsung plan to use the technologies to make 10 nanometer-class NAND flash memory and other chips, while Intel will likely use it to develop faster microprocessors, the Nikkei said. A nanometer is a millionth of a millimeter, or a hair’s width divided by 100,000.

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