Samsung and Toshiba to Support Toggle DDR 2.0 Specification
Samsung and Toshiba today announced their commitment to development of the most advanced high-performance NAND flash memory technology available today a double data rate (DDR) NAND flash memory with a 400 megabit-per-second (Mbps) interface, toggle DDR 2.0 specification. The high-performance NAND memory is expected to be of immediate benefit to a host of NAND-based mobile and consumer electronics applications, especially where there is consumer demand for an extra stretch in performance. Both companies will support a standard industry specification to enable broad-scale acceptance of this new high-speed technology. Samsung and Toshiba will focus on assuring a 400Mbps interface for the toggle DDR 2.0 specification, which provides a three-fold increase over toggle DDR 1.0, and a ten-fold increase over 40Mbps SDR NAND in widespread use today.
Toggle DDR provides a faster interface than conventional NAND using an asynchronous design, delivering the benefits of high-speed data transfer to a wider market, such as for solid state drive (SSD) applications including enterprise storage, mobile phones, multimedia terminals and consumer products, said Masaki Momodomi, Technical Executive, Memory product, Toshiba Corporation. And we will continue to make the best effort possible to create standard, high-speed NAND Flash interface solutions with NAND vendors and customers, which will accelerate the revolution in storage applications.
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