Toshiba to make sub-25nm flash memory
A Toshiba spokeswoman recently said the company plans to start commercial production of NAND flash memory chips with circuitry widths somewhere between 20 and 29 nanometres in the second half of 2010, but it has not been decided whether the circuitry will be wider or narrower than 25 nanometres.
Toshiba plans to begin output of NAND chips with circuitry widths in the upper 20 nanometre range soon, while production of chips with circuitry widths in the lower 20 nanometres is slated to start as early as 2012, the Nikkei said. The spokeswoman said Toshiba is in talks with the Netherlands’ ASML on the possible purchase of a prototype of cutting-edge chip-making equipment that uses extreme ultraviolet (EUV) lithography to form narrower circuitry onto silicon wafers.
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