Micron and Nanya Develop a 2Gb DDR3 Memory Device Using 42nm DRAM
Micron Technology and Nanya Technology today announced that they have jointly developed a 2-gigabit (Gb) DDR3 memory device using their new copper-based 42-nanometer (nm) DRAM process technology. The move to smaller process geometries is fundamentally important for maintaining manufacturing cost efficiencies while also providing benefits for customers including lower power, higher performance, greater density, and smaller die sizes. The new 42nm process now makes 1.35-volts the standard, mainstream voltage requirement, compared to 1.5-volt with previous generations. The 1.35 voltage can provide a savings of up to 30-percent in some scenarios!
The new 42nm DRAM process technology uses the more efficient and reliable copper metallization technology, allowing Micron and Nanya to stay on the leading-edge of process scaling. Micron has long recognized the benefits of copper in aiding DRAM scale, and has continued to leverage and refine the technology for nearly a decade. When compared to other metallization techniques, such as aluminum, copper is recognized as the more extendible, reliable and cost-effective approach for advancing process geometries and enhancing product performance. As Micron and Nanya continue to scale, moving to their next-generation 3Xnm process technology, the companies are building on their strong copper foundation to deliver high-quality and highly reliable products.
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