Intel & Micron Officially Introduce 25-Nanometer NAND
Intel Corporation and Micron Technology today announced the world’s first 25-nanometer (nm) NAND technology, which provides a more cost-effective path for increasing storage capacity in such popular consumer gadgets as smartphones, personal music and media players (PMPs), as well as the new high-performance class of solid-state drives (SSDs). The 25nm, 8GB device is sampling now and is expected to enter mass production in the second quarter of 2010. For consumer electronics manufacturers, the device provides the highest-density in a single 2 bits-per-cell multi-level cell (MLC) die that will fit an industry-standard, thin small-outline package (TSOP). Multiple 8GB devices can be stacked in a package to increase storage capacity. The new 25nm 8GB device reduces chip count by 50 percent compared to previous process generations, allowing for smaller, yet higher density designs and greater cost efficiencies. For example, a 256GB solid-state drive (SSD) can now be enabled with just 32 of these devices (versus 64 previously), a 32GB smartphone needs just four, and a 16GB flash card requires only two.
“To lead the entire semiconductor industry with the most advanced process technology is a phenomenal feat for Intel and Micron, and we look forward to further pushing the scaling limits,” said Brian Shirley, vice president of Micron’s memory group. “This production technology will enable significant benefits to our customers through higher density media solutions.” “Through our continued investment in IMFT, we’re delivering leadership technology and manufacturing that enable the most cost-effective and reliable NAND memory,” said Tom Rampone, vice president and general manager, Intel NAND Solutions Group. “This will help speed the adoption of solid-state drive solutions for computing.”
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