SanDisk and Toshiba Announce 256 Gigabit 48-Layer 3D NAND Chip
SanDisk Announces Worlds First 256 Gigabit 3-bit-per-cell (X3) 48-layer 3D NAND Chip; Operations Begin for 3D NAND Pilot Line
MILPITAS, Calif., August 3, 2015 SanDisk Corporation (NASDAQ: SNDK), a global leader in flash storage solutions, announced today its 256 Gigabit (Gb) 3-bit-per-cell (X3) 48-layer 3D NAND chip and the start of 3D NAND pilot line operations in Yokkaichi, Japan in conjunction with its partner, Toshiba.
We are pleased to announce our first 3D NAND chip targeted for production, said Dr. Siva Sivaram, executive vice president, memory technology, SanDisk. This is the worlds first 256 Gb X3 chip, developed using our industry-leading 48-layer BiCS technology1 and demonstrating SanDisks continued leadership in X3 technology. We will use this chip to deliver compelling storage solutions for our customers.
BiCS is a nonvolatile memory architecture designed to bring new levels of density, scalability and performance to flash-based devices. BiCS NAND memory will also provide enhanced write/erase endurance, write speeds and energy efficiency relative to conventional 2D NAND.
SanDisks 256 Gb X3 BiCS chip is designed for wide applicability in consumer, client, mobile and enterprise products, and is expected to begin shipping in SanDisks products in 2016.
About SanDisk
SanDisk Corporation (NASDAQ: SNDK), a Fortune 500 and S&P 500 company, is a global leader in flash storage solutions. For more than 27 years, SanDisk has expanded the possibilities of storage, providing trusted and innovative products that have transformed the electronics industry. Today, SanDisks quality, state-of-the-art solutions are at the heart of many of the world’s largest data centers, and embedded in advanced smartphones, tablets and PCs. SanDisks consumer products are available at hundreds of thousands of retail stores worldwide. For more information, visit www.sandisk.com.
1 SanDisk survey, as of August 3, 2015.
