Globalfoundries Talks 14-nm Process w/ FinFETs – Coming Soon!
GLOBALFOUNDRIES today announced that the company is accelerating the companies roadmap with the launch of a new technology called 14nm-XM. 14nm-XM will bring both performance and power benefits of three-dimensional FinFET transistors with less risk and a faster time-to-market. The XM stands for eXtreme Mobility, and it is the industrys leading non-planar architecture that is truly optimized for mobile system-on-chip (SoC) designs, providing a whole product solution from the transistor all the way up to the system level. The technology is expected to deliver a 40-60% improvement in battery life when compared to todays two-dimensional planar transistors at the 20nm node.
The 14nm-XM offering is based on a modular technology architecture that uses a 14nm FinFET device combined with elements of GLOBALFOUNDRIES 20nm-LPM process, which is well on its way to production. Leveraging the maturity of the 20nm-LPM technology will enable a smooth transition for customers looking to tap the benefits of FinFET SoCs as soon as possible. Technology development is already underway, with test silicon running through GLOBALFOUNDRIES Fab 8 in Saratoga County, N.Y. Early process design kits (PDKs) are available now, with customer tape-outs expected in 2013.
Comments are closed.