Elpida begins sampling 512Mbit Rambus XDR DRAM
Japan-based Elpida Memory on March 22 announced the availability of 512Mbit XDR DRAM devices in sample quantities. XDR DRAM is based on the XDR memory interface architecture developed by Rambus, and the new Elpida device operates at a 4.0GHz data rate. The memory looks great on paper, but I’ll wait to see what AMD and Intel does with it before I get all worked up over it.
Elpida’s 512Mbit XDR DRAM (EDX5116ACSE) devices are organized as 4M words16-bits 8 banks, and have a 4.0GHz operation and 8.0GB/sec data transfer rate, which is more than 4 times the peak bandwidth of industry-standard DDR2 memory devices. They are manufactured using Elpida’s 90nm process technology and are available in 104-ball FBGA packages. The devices utilize advanced Rambus-specific features such as Differential Rambus Signal Level (DRSL) interface, which minimizes the signal swing and noise, and Octal Data Rate (ODR), which transfers 8 bits per clock cycle to achieve 4.0GHz operation even with the commonly used 400MHz clock.
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