Intel, Micron Introduce 20nm 8GB MLC NAND Flash – Now Sampling
Intel and Micron today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, providing a high-capacity, small form factor storage option for saving music, video, books and other data on smartphones, tablets and computing solutions such as solid-state drives (SSDs). The 20nm, 8GB device is sampling now and expected to enter mass production in the second half of 2011. At that time, Intel and Micron also expect to unveil samples of a monolithic 16GB device, creating up to 128GBs of capacity in a single solid-state storage solution that is smaller than a U.S. postage stamp. In terms of computing MLC NAND Flash has changed and will change how we store our data. Over 10 million SSDs based on MLC NAND Flash have already been sold and that looks like it is only the beginning.
Our goal is to enable instant, affordable access to the worlds information, said Tom Rampone, vice president and general manager, Intel Non-Volatile Memory Solutions Group. Industry-leading NAND gives Intel the ability to provide the highest quality and most cost-effective solutions to our customers, generation after generation. The Intel-Micron joint venture is a model for the manufacturing industry as we continue to lead the industry in process technology and make quick transitions of our entire fab network to smaller and smaller lithographies.
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